Activating Ion Implants in 4H-SiC by Annealing with An AIN or BN Cap*

Activating Ion Implants in 4H-SiC by Annealing with An AIN or BN Cap*

著者名:

Jones, K.

掲載資料名:

State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2002-3

発行年:

2002

開始ページ:

117

終了ページ:

122

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773690 [1566773695]

言語:

英語

請求記号:

E23400/2002-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014037
シリーズID:	PA00000028
会議名:	State-of-the-art program on compound semiconductors ; Wide bandgap semiconductors for photonic and electronic devices and sensors
回次:	36th ; 2nd
会議開催地:	Philadelphia, PA, USA
会議開催年:	2002.05.12-2002.05.17

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