Improved Surface Morphology And Optical Properties of InGaN/GaN Multiple Quantum Well Structures Grown by MOCVD Using Different Growth Parameters

Improved Surface Morphology And Optical Properties of InGaN/GaN Multiple Quantum Well Structures Grown by MOCVD Using Different Growth Parameters

著者名:

Florescu, D.

掲載資料名:

State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2002-3

発行年:

2002

開始ページ:

70

終了ページ:

75

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773690 [1566773695]

言語:

英語

請求記号:

E23400/2002-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014037
シリーズID:	PA00000028
会議名:	State-of-the-art program on compound semiconductors ; Wide bandgap semiconductors for photonic and electronic devices and sensors
回次:	36th ; 2nd
会議開催地:	Philadelphia, PA, USA
会議開催年:	2002.05.12-2002.05.17

類似資料:

1 国際会議録 Direct AFM Observation of Strain Effects on MOCVD Grown GaN Epilayer Surface Morphology Florescu, D. I., Lee, D. S., Ramer, J. C., Merai, V. N., Parekh, A., Lu, D., Armour, E. A., Quinn, W. E. Materials Research Society	7 国際会議録 Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures Monemar, B., Paskov, P.P., Haratizadeh, H., Pozina, G.R., Bergman, J.P., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. SPIE-The International Society for Optical Engineering
2 国際会議録 Optical and electrical properties of interdigitated InGaN/GaN green light-emitting diodes Lee, J., Eliseev, P.G., Osinski, M., Lee, D.-S., Ramer, J.C., Florescu, D.I., Armour, E.A. SPIE - The International Society of Optical Engineering	8 国際会議録 Influence of a Low Composition InxGal-xN/GaN Superlattice on the Optical Properties of Blue and Green InxGal-xN Based LEDs Ramer, J., Florescu, D., Lee, D., Armour, E. Electrochemical Society
3 国際会議録 Structural and Optical Properties of AlGaN/GaN Quantum-Well Structures Grown by MOCVD on Sapphire Niebuhr, R., Bachem, K. H., Behr, D., Hoffmann, C., Kaufmann, U., Lu, Y., Santic, B., Wagner, J., Arlery, M., Rouviere, … MRS - Materials Research Society	9 国際会議録 Influence of barrier growth temperature on the properties of InGaN/GaN quantum wells Wen,T.-C., Lee,S.-C., Lee,W.-I. SPIE-The International Society for Optical Engineering
4 国際会議録 MOCVD Growth and Propertics of InGaN/GaN Multi-Quantum Wells Keller,S., Abare,A.C., Minsky,M.S., Wu,X.H., Mack,M.P., Speck,J.S., Hu,E., Coldren,L.A., Mishra,U.K., DenBaars,S.P. Trans Tech Publications	10 国際会議録 Structural and Optical Properties of InGaN/GaN Multi-Quantum Well Structures With Different Indium Compositions Kim, Chang-Soo, Noh, Sam-Kyu, Lee, Kyuhan, Kim, Sunwoon, Song, Jay P. Materials Research Society
5 国際会議録 Structural and Optical Characterization of Non-polar A-plane III Nitride Thin Films Grown on R-plane… Lu, D., Parekh, A., Merai, V., Ramer, J. C., Udovich, E. S., Lee, D. S., Florescu, D. I., Begarney, M. J., Armou, E. A. Electrochemical Society	11 国際会議録 Optical Characteristics of MOCVD-Grown InGaN/GaN Multiple Quantum Wells Investigated by Excitation Energy Dependent PL and PLE Spectroscopy Cho, Yong-Hoon, Song, J. J., Keller, S., Mishra, U. K., DenBaars, S. P. MRS - Materials Research Society
6 国際会議録 Properties of InGaN/AlInGaN/AlGaN quantum-well UV light-emitting diodes Lee, J., Eliseev, P.G., Osinski, M., Lee, D.-S., Florescu, D.I., Guo, S., Pophristic, M. SPIE-The International Society for Optical Engineering	12 国際会議録 Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells Cho, Y-H., Schmidt, T. J., Bidnyk, S., Song, J. J., Keller, S., Mishra, U. K., DenBaars, S. P. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12