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Er-doped GaN Grown By Molecular Beam Epitaxy

著者名:
Ng, H.M  
掲載資料名:
State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2002-3
発行年:
2002
開始ページ:
64
終了ページ:
69
総ページ数:
6
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773690 [1566773695]
言語:
英語
請求記号:
E23400/2002-3
資料種別:
国際会議録

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