EFFECTIVE INTRINSIC GETITERING FOR 200 mm AND 300 mm P/P- WAFERS IN LOW THERMAL BUDGET 0.13 μm ADVANCED CMOS LOGIC PROCESS

EFFECTIVE INTRINSIC GETITERING FOR 200 mm AND 300 mm P/P- WAFERS IN LOW THERMAL BUDGET 0.13 μm ADVANCED CMOS LOGIC PROCESS

著者名:

掲載資料名:

Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2002-2

発行年:

2002

開始ページ:

647

終了ページ:

657

総ページ数:

11

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773744 [1566773741]

言語:

英語

請求記号:

E23400/2002-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014035
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	9th
会議開催地:	Philadelphia, PA, USA
会議開催年:	2002.05.13-2002.05.17

類似資料:

1 国際会議録 EFFECTIVE INTRINSIC GETITERING FOR 200 mm AND 300 mm P/P- WAFERS IN LOW THERMAL BUDGET 0.13 pm ADVANCED CMOS LOGIC PROCESS Binns, M.J., Bertolini, S., Wise, R., Myers, D.J., McKenna, T.A. Electrochemical Society	7 国際会議録 Advance KrF chemical amplified photoresists for 0.13-μm lithography Lin,Q., Sack,M.J. SPIE-The International Society for Optical Engineering
2 国際会議録 Impact of Thermal Budget on Junction Leakage in a 0.18 and 0.13 μm CMOS Technology Poyai, A., Simoen, E., Claeys, C., Rooyackers, R., Redolfi, A. Electrochemical Society	8 国際会議録 THE CONTROL OF BORON AUTO-DOPING DURING DEVICE PROCESSING FOR P/P+ EPI WAFERS WITH NO BACK-SURFACE OXIDE SEAL Binns, M.J., Kommu, S., Seacrist, M.R., Standley, R.W., Wise, R., Myers, D.J., Tisserand, D., Doyle, D. Electrochemical Society
3 国際会議録 Chrome etch for <0.13μm advanced reticle production Buie,M.J., Stoehr,B., Huang,Y.-C. SPIE-The International Society for Optical Engineering	9 国際会議録 LER characterization and impact on 0.13-μm lithography for OPC modeling Nikolsky, P., Tweg, R., Altshuler, E., Shauly, E. N. SPIE - The International Society of Optical Engineering
4 国際会議録 TID and SEE Performance of a Commercial 0.13μm CMOS Technology Hänsler, Kurt, Anelli, Giovanni, Baldi, Silvia, Faccio, Federico, Hajdas, Wojtek, Marchioro, Alessandro ESA Publication Division	10 国際会議録 Characterization of repairs to KrF 300-mm wafer printability for 0.13-pm design rule with attenuated phase-shifting mask Chou, W., Chen, T., Tseng, W., Huang, P., Tseng, C.C., Chung, M., Wang, D., Huang, N. SPIE-The International Society for Optical Engineering
5 国際会議録 A tri-mode 802.11 baseband PHY mixed signal integrated circuit in 0.13-μm CMOS Ryan, P.J., Hart, B., Webb, M., Wong, K. SPIE - The International Society of Optical Engineering	11 国際会議録 Trench pattern lithography for 0.13- and 0.10-μm logic devices at 248- and 193-nm wavelengths Wang,Y.-Y., Lin,H.-T., Yu,S.-S., Chen,C.-K., Ku,Y.-C., Yen,A., Lin,B.J. SPIE-The International Society for Optical Engineering
6 国際会議録 0.13 μm CMOS Technology with Optimized Poly-Si/No-Oxide Gate Stack Kubicek, S., Jansen, P., Badenes, G., Schaekers, M., Koldyaev, V., Deferm, L., De Meyer, K., Kerr, D., Naem, A. Electrochemical Society	12 国際会議録 Halo Optimization for 0.13µm SOI CMOS Technology P.G. Agopian, J.M. Arrabaça, J.A. Martino Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12