Bi-Directional Double-Side Double-Gate IGBT Fabricated by Wafer Bonding

Bi-Directional Double-Side Double-Gate IGBT Fabricated by Wafer Bonding

著者名:

Kub, F.J.

掲載資料名:

Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2001-27

発行年:

2001

開始ページ:

242

終了ページ:

242

総ページ数:

1

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773607 [1566773601]

言語:

英語

請求記号:

E23400/200127

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014031
シリーズID:	PA00000028
会議名:	International Symposium on Semiconductor Wafer Bonding ; Fall Meeting of the Electrochemical Society
回次:	6th ; 2001
会議開催地:	San Francisco, CA, USA
会議開催年:	2001.09.00

類似資料:

1 国際会議録 Si-Si PN Junctions Fabricated by Wafer Bonding in UHV Hobart, K.D., Desmond, C.A., Kub, F.J., Twigg, M.E., Jernigan, G.G. Electrochemical Society	7 国際会議録 Positive Temperature Coefficient SiC PiN Diodes E.A. Imhoff, K.D. Hobart, F.J. Kub, M.G. Ancona, R.L. Myers-Ward Trans Tech Publications
2 国際会議録 Improved Low Temperature Hydrophobic Si-Si Bonding Techniques Esser, R., Hobart, K.D., Kub, F.J. Electrochemical Society	8 国際会議録 UV Activation Treatment for Hydrophobic Wafer Bonding Dang, H., Holl, S.L, Colinge, C.A., Hobart K.D., Kub, F.J. Electrochemical Society
3 国際会議録 On scaling the thin film Si thickness of SOI substrates. A Perspective on Wafer Bonding for Thin Film Devices Hobart, K.D., Kub, F.J., Twigg, M.E., Fatemi, M. Kluwer Academic Publishers	9 国際会議録 Rapid Thermal Processing of Wafer Bonded Abrupt Junction Tunnel Diodes Esser, R.H., Hobart, K.D., Kub, F.J. Electrochemical Society
4 国際会議録 UV/Ozone Activation Treatment for Wafer Bonding Hobart, K.D., Colinge, C.A., Ayele, G., Kub, F.J. Electrochemical Society	10 国際会議録 Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT K.D. Hobart, E.A. Imhoff, F.J. Kub, A.R. Hefner, T.H. Duong Trans Tech Publications
5 国際会議録 Fabrication of Silicon-on-Diamond (SOD) Substrates Feygelson, T.I., Hobart, K.D., Ancona, M., Kub, F.J., Butler, J.E. Electrochemical Society	11 国際会議録 Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates Myers, R.L., Saddow, S.E., Rao, S., Hobart, K.D., Fatemi, M., Kub, F.J. Trans Tech Publications
6 国際会議録 Triple Stack Bonding for High Voltage Si Devices K.D. Hobart, F.J. Kub, B.F. Phlips, J.D. Kurfess, J. Neilson Electrochemical Society	12 国際会議録 Electrical Characteristic of Low Temperature Direct Silicon-Silicon Bonding for Power Device Applications Kub, F.J., Hobart, K.D., Desmond, C.A. Electrochemical Society

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