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MOCVD Grown InGaAsN Using efficent and Novel Precursor, Tertibutylhydrazine, for optoelectronic device applications. (Invited)

著者名:
Li, N.V.
Sharps, P.R.
Newman, F.
Chang, P.C.
Baca, A.G.
Hou, H.Q.
さらに 1 件
掲載資料名:
State-of-the-art-program on compound semiconductors (STAPOCS XXXV) : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2001-20
発行年:
2001
開始ページ:
17
終了ページ:
22
総ページ数:
6
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773539 [1566773539]
言語:
英語
請求記号:
E23400/200120
資料種別:
国際会議録

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