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Material Aanalysis On FET Degradation Phenomena Caused By Hot Carrier In O.35μm WSi Gate GaAs HIGFETS

著者名:
Ohshika, Katsushi
Yamashita, Tomoko
Fukui, Munetoshi
Yanazawa, Hiroshi
Takatanni, Shinichiro
Matsumoto, Hidetoshi
さらに 1 件
掲載資料名:
Semiconductor technology (ISTC 2001) : proceedings of the 1st International Conference on Semiconductor Technology
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2001-17
発行年:
2001
開始ページ:
448
終了ページ:
457
総ページ数:
10
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773508 [1566773504]
言語:
英語
請求記号:
E23400/200117
資料種別:
国際会議録

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