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N Type Dopant Activation behaviors of poly Si1-xGex with Ge contents and activation temperature

著者名:
Kang, S.-K
Kim, J.J.
Kang, H.B.
Yang, C.W.
Ahn, T.H.
Yeo, I.S.
Lee, T.W.
Lee, Y.H.
Ko, D.-H.
さらに 4 件
掲載資料名:
Semiconductor technology (ISTC 2001) : proceedings of the 1st International Conference on Semiconductor Technology
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2001-17
発行年:
2001
開始ページ:
268
終了ページ:
275
総ページ数:
8
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773508 [1566773504]
言語:
英語
請求記号:
E23400/200117
資料種別:
国際会議録

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