Device Fabrication and Evaluation of Alternative High-K Dielectrics and Gate Electrodes Using a Non-Self Aligned Gate process
- 著者名:
Kim, I. Han, S.K. Kiether, W. Lee, S.J. Lee, C.H. Luan, H.F. Luo, Z. Rying, E. Wicaksana, Z.Wang D. Zhu, W. Hauser, J. Kiingon, A. Kwang, D.L. Ma, T.P. Maria, J.P. Misra, V. Osburn, C.M. - 掲載資料名:
- Rapid thermal and other short-time processing technologies II : proceedings of the international symposium
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2001-9
- 発行年:
- 2001
- 開始ページ:
- 211
- 終了ページ:
- 220
- 総ページ数:
- 10
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773157 [1566773156]
- 言語:
- 英語
- 請求記号:
- E23400/2001-9
- 資料種別:
- 国際会議録
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4
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Characteristics of Ultra Thin (EOT<1 nm) RTCVD Zr Silicate (Zr 27Si 10O 63) Gate Dielectrics
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