Device Fabrication and Evaluation of Alternative High-K Dielectrics and Gate Electrodes Using a Non-Self Aligned Gate process | 東京工業大学附属図書館文献データベース

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Device Fabrication and Evaluation of Alternative High-K Dielectrics and Gate Electrodes Using a Non-Self Aligned Gate process

著者名:

Wicaksana, Z.Wang D.

さらに 12 件

掲載資料名:

Rapid thermal and other short-time processing technologies II : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2001-9

発行年:

2001

開始ページ:

211

終了ページ:

220

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773157 [1566773156]

言語:

英語

請求記号:

E23400/2001-9

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014012
シリーズID:	PA00000028
会議名:	International Symposium on Rapid Thermal and Other Short-Time Processing Technologies ; Meeting of the Electrochemical Society
回次:	2nd ; 199th
会議開催地:	Washington D.C., USA
会議開催年:	2001.03.24-2001.03.29

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2 国際会議録 Etching of High-k Gate Dielectrics and Gate Metal Candidates Han, S.K, Kim, I., Zhong, H, Heuss, G.P., Lee, J.H, Wicairsana, D., Maria, J.P., Misra, V., Osburn, C.M. Electrochemical Society	8 国際会議録 Ultrathin (EOT < 7A) Ta2O5 Gate Stacks Prepared by an In-Situ RT-MOCVD Process Lee, S.J., Luan, H.F., Lee, C.H, Senzoki, Y, Roberts, D., Kwong, D.-L. Electrochemical Society
3 国際会議録 High Quality Ultra Thin HfO 2 Gate Stack Prepared by In-Situ RT-MOCVD Process Lee, S.J., Luan, H.F., Bai, W.P., Lee, C.H., Clark, B., Rabents, D., Myers, L., Kwang, D.L. Electrochemical Society	9 国際会議録 Wear-Out and Stress-Induced Leakage Current of Ultrathin Gate Oxides Thees, H.-J., Osburn, C.M., Shiely, J.P., Massoud, H.Z. Electrochemical Society
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6 国際会議録 * An Annealing Study of La 2O 3-SiO 2 and ZrO 2-SiO 2 Gate Dielectrics Kingon, A.I., Maria, J.P., Wicaksana, D., Parrette, J. Electrochemical Society	12 国際会議録 Dielectric Properties of(ZrxSnyTiz) 204 Films Deposited by Ion Beam Sputtering Ishizuka, Y., Wicaksana, D., Maria, J.P., Kingon, A.I. Electrochemical Society

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