Trapping and Annealing of Charge Generated by FN Electron Injection in Buried Oxide of SIMOX and UNIBOND SOI Structures

Trapping and Annealing of Charge Generated by FN Electron Injection in Buried Oxide of SIMOX and UNIBOND SOI Structures

著者名:

掲載資料名:

Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2001-3

発行年:

2001

開始ページ:

139

終了ページ:

144

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773096 [1566773091]

言語:

英語

請求記号:

E23400/2001-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014007
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	10th : 199th
会議開催地:	Washington D.C., USA
会議開催年:	2001.03.25-2001.03.29

類似資料:

1 国際会議録 Charge carrier injection and trapping in the buried oxides of SOI structures Nazarov, A.N., Kilchytska, V., Barchuk, I.P. Kluwer Academic Publishers	7 国際会議録 Effect of ionising irradiation on the charge build-up in multilayer buried dielectrics of SOI structures Barchuck, I P, Kilchitskaya, V I, Lvsenko, V S, Nazarov, A N, Rudenko, T E, Djurenko, S V, Rudenko, A N, Yurchenko, A P Electrochemical Society
2 国際会議録 Parameter Extraction for Buried Oxide Traps from High-Temperature Kink Effect of Back- Channel SOI TM n-MOSFET Nazarov, A N, Barchuk, I P, Lysenko, V S L, Colinge, J P Electrochemical Society	8 国際会議録 MOSFFET Based 'Gated-Diode' Characterization of the Buried Oxide Interface of Irradiated and non-Irradiated SIMOX and UNIBOND Wafers Ioannou, D., Salman, A., Lawrence, R.K., Jenkins, W., Liu, S.T. Electrochemical Society
3 国際会議録 Thermopolarisation and depolarisation processes into BOX of SOI SIMOX structures Nazarov, A N, Barchuck, I P, Kilchirskaya, V I Electrochemical Society	9 国際会議録 THERMAL ANNEALING OF RADIATION-INDUCED TRAPPED CHARGE IN SIMOX AND THERMAL OXIDE THIN FILMS Herve, D., Paillet, Ph., Leray, J.L. Materials Research Society
4 国際会議録 Hydrogen and high-temperature charge instability of SOI structures and MOSFETs Nazarov, A.N. Kluwer Academic Publishers	10 国際会議録 RADIATION-INDUCED OXIDE CHARGE DISTRIBUTIONS IN SIMOX BURIED OXIDES Hwang, J. M., Bartko, J., Rai-Choudhury, P., Bailey, W. E. Materials Research Society
5 国際会議録 High current injected charge-to-breakdown characteristics of thin gate oxide on SIMOX SOI having different buried oxide thicknesses Seo, J-H, Woo, J C, Mendicino, M, Vasudev, P K Electrochemical Society	11 国際会議録 Radiation effect on electrical properties of fully-depleted UNIBOND SOI MOSFETs Houk, Y., Nazarov, A. N., Turchanikov, V. I., Lysenko, V. S., Adriaensen, S., Flandre, D. Kluwer Academic Publishers
6 国際会議録 High-temperature behavior of fully-depleted SOI MOSFETs in case of charge instability of buried oxide Nazarov, A.N., Houk, Y., Vovk, Ya.N., Lysenko, V.S., Flandre, D. Electrochemical Society	12 国際会議録 Characterisation of SOI substrates: application to recent SIMOX and UNIBOND wafers Aspar, B, Moriceau, H, Auberton-Herve, A J Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12