Evaluation and Comparison of Various Silicon-On-Sapphire (SOS) Materials using the Pseudo-MOSFET Technique

Evaluation and Comparison of Various Silicon-On-Sapphire (SOS) Materials using the Pseudo-MOSFET Technique

著者名:

掲載資料名:

Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2001-3

発行年:

2001

開始ページ:

133

終了ページ:

138

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773096 [1566773091]

言語:

英語

請求記号:

E23400/2001-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014007
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	10th : 199th
会議開催地:	Washington D.C., USA
会議開催年:	2001.03.25-2001.03.29

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2 国際会議録 Recent Advances in SOS Material and Devices Moriyasu, Y., Morishita, T., Matsui, M., Yasujima, A. Electrochemical Society	8 国際会議録 SOS MOSFET's Merckel G. Noordhoff International Publishing
3 国際会議録 Preparation of High Quality Silicon on Sapphire Moriyasu, Y, Morishita, T, Matsui, M, Yasujima, A, Ishida, M Electrochemical Society	9 国際会議録 Silicon-On-Sapphire Material and Device Properties at High and Low Temperature Munteanu, D, Cristoloveanu, S, Lagnado, I, de Ia Houssaye, P Electrochemical Society
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