Enhanced Short-Channel Effects of Sub-50 nm Gate Length MOSFETs with High-k Gate Insulator Films

Enhanced Short-Channel Effects of Sub-50 nm Gate Length MOSFETs with High-k Gate Insulator Films

著者名:

Fujimura, R.

掲載資料名:

ULSI Process Integration : proceedings of the International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2001-2

発行年:

2001

開始ページ:

313

終了ページ:

323

総ページ数:

11

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773089 [1566773083]

言語:

英語

請求記号:

E23400/2001-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014006
シリーズID:	PA00000028
会議名:	International Symposium on ULSI Process Integration ; Meeting of the Electrochemical Society
回次:	2nd ; 199th
会議開催地:	Washington, D.C., USA
会議開催年:	2001.03.24-2001.03.31

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