Impact of Indium and Boron Interaction on Short Channel and Reverse Short Channel Effects for NMOSFETs

Impact of Indium and Boron Interaction on Short Channel and Reverse Short Channel Effects for NMOSFETs

著者名:

Ong, S.Y.

掲載資料名:

ULSI Process Integration : proceedings of the International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2001-2

発行年:

2001

開始ページ:

305

終了ページ:

312

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773089 [1566773083]

言語:

英語

請求記号:

E23400/2001-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014006
シリーズID:	PA00000028
会議名:	International Symposium on ULSI Process Integration ; Meeting of the Electrochemical Society
回次:	2nd ; 199th
会議開催地:	Washington, D.C., USA
会議開催年:	2001.03.24-2001.03.31

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