Characterization of Polysilsequioxane Based Low-k Dielectrics

Characterization of Polysilsequioxane Based Low-k Dielectrics

著者名:

掲載資料名:

Copper Interconnects, New Contact Metallurgies/Structures, and Low-K Interlevel Dielectrics : proceedings of the International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-27

発行年:

2000

開始ページ:

165

終了ページ:

174

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772945 [156677294X]

言語:

英語

請求記号:

E23400/200027

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013996
シリーズID:	PA00000028
会議名:	Symposium on Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics ; Meeting of the Electrochemical Society
回次:	2000 ; 198th
会議開催地:	Phoenix, AZ, USA
会議開催年:	2000.10.22-2000.10.27

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