The Formation Mechanism of SiC/Si Interface in the Growth of SiC Films on Si

The Formation Mechanism of SiC/Si Interface in the Growth of SiC Films on Si

著者名:

掲載資料名:

High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-18

発行年:

2000

開始ページ:

140

終了ページ:

151

総ページ数:

12

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772853 [1566772850]

言語:

英語

請求記号:

E23400/200018

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013987
シリーズID:	PA00000028
会議名:	State-of-the-art Program on Compound Semiconductors - SOTAPOCS ; High Speed Compound Semiconductor Devices for Wireless Applications Symposia ; Meeting of the Electrochemical Society
回次:	33rd ; 2nd ; 198th
会議開催地:	Phoenix, Arizona, USA
会議開催年:	2000.10.22-2000.10.27

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