Reduced Area InGaAs/InP HBT Device Fabrication for High Speed Circuit Applications

Reduced Area InGaAs/InP HBT Device Fabrication for High Speed Circuit Applications

著者名:

Kopf, R.F.

掲載資料名:

High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-18

発行年:

2000

開始ページ:

7

終了ページ:

14

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772853 [1566772850]

言語:

英語

請求記号:

E23400/200018

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013987
シリーズID:	PA00000028
会議名:	State-of-the-art Program on Compound Semiconductors - SOTAPOCS ; High Speed Compound Semiconductor Devices for Wireless Applications Symposia ; Meeting of the Electrochemical Society
回次:	33rd ; 2nd ; 198th
会議開催地:	Phoenix, Arizona, USA
会議開催年:	2000.10.22-2000.10.27

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2 国際会議録 Optimization of InGaAs/InP DHBT Devices for Use in High Speed Circuits Kopf, R.F., Wang, Y.-C., Hamm, R.A., Ryan, R.W., Tate, A., Melendes, M.A., Pullela, R., Georgiou, G., Mattia, J.-P., … Electrochemical Society	8 国際会議録 InP/InGaAs Heterostructure Bipolar Transistors Using a Patterned Subcollector Hamm, R., Ryan, R., Pinzone, C., Kopf, R., Pullela, R., Tate, A., Bunit, J. Electrochemical Society
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4 国際会議録 Fabrication of Reliable InGaAs/InP DHBT Structures for High Speed Circuit Applications Kopf, R.F., Hamm, R.A., Ryan, R.W., Tate, A., Chen, Y.K., Georgiou, G., Ren, F., Lang, D.V. Electrochemical Society	10 国際会議録 lnGaAsIlnP DHBT Structures for High Speed Circuit Applications Georgiou, G., Mattia, J.-P., Baeyens, Y., Tsai, H.-S., Chen, Y -K, Thevin, J. Electrochemical Society
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