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Gate oxide Integrity Response as a Function of Near the Surface Crystal Defects Morphology

著者名:
Borionetti, G.
Godio, P.
Bonoli, F.
Comara, M.
Orizio, R.
Falster, R.
さらに 1 件
掲載資料名:
High Purity Silicon VI : proceedings of the sixth International Symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2000-17
発行年:
2000
開始ページ:
456
終了ページ:
466
総ページ数:
11
出版情報:
Bellingham, Wash.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772846 [1566772842]
言語:
英語
請求記号:
E23400/200017
資料種別:
国際会議録

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