Intrinsic Gettering in Nitrogen Doped Czochralski Crystal Silicon
- 著者名:
Yang, D. Fan, R. Shen, Y. Tian, D. Li, L. Que, D. - 掲載資料名:
- High Purity Silicon VI : proceedings of the sixth International Symposium
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2000-17
- 発行年:
- 2000
- 開始ページ:
- 357
- 終了ページ:
- 364
- 総ページ数:
- 8
- 出版情報:
- Bellingham, Wash.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566772846 [1566772842]
- 言語:
- 英語
- 請求記号:
- E23400/200017
- 資料種別:
- 国際会議録
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11
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Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process
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