Tin Doping Effects in Silicon*

Tin Doping Effects in Silicon*

著者名:

Simoen, E.

掲載資料名:

High Purity Silicon VI : proceedings of the sixth International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-17

発行年:

2000

開始ページ:

223

終了ページ:

235

総ページ数:

13

出版情報:

Bellingham, Wash.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772846 [1566772842]

言語:

英語

請求記号:

E23400/200017

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013986
シリーズID:	PA00000028
会議名:	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
回次:	6th ; 198th
会議開催地:	Phoenix, Arizona, USA
会議開催年:	2000.10.22-2000.10.27

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2 国際会議録 Oxygen Precipitation and Thermal Donor Formation in Pb and C-Doped n-type Czochralski Silicon Neimash, M.V., Kras'ko, M., Kraitchinskii, A,, Voytovych, V., Kabaldin, O., Tsmots, V., Simoen, E., Claeys, C. Electrochemical Society	8 国際会議録 Monitoring of Neutron Transmutation Doped Silicon Recombination Properties by Microwave Absorption Transient Techniques Gaubas, E., Vanhellemont, J., Simoen, E., Claeys, C., Clauws, P., Kraner, H.W., Vilkelis, G. Electrochemical Society
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