Direct Proof of Argon Atoms Incorporated Into High-Purity Silicon Single Crystals During Growth in Argon Gas Ambient

Direct Proof of Argon Atoms Incorporated Into High-Purity Silicon Single Crystals During Growth in Argon Gas Ambient

著者名:

Ulyashin, A.G.

掲載資料名:

High Purity Silicon VI : proceedings of the sixth International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-17

発行年:

2000

開始ページ:

66

終了ページ:

76

総ページ数:

11

出版情報:

Bellingham, Wash.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772846 [1566772842]

言語:

英語

請求記号:

E23400/200017

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013986
シリーズID:	PA00000028
会議名:	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
回次:	6th ; 198th
会議開催地:	Phoenix, Arizona, USA
会議開催年:	2000.10.22-2000.10.27

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4 国際会議録 Comparative Raman And Tem Analysis Of The Evolution Of Platelet Defects In Plasma Hydrogenated And Annealed Czochralski Silicon Job, R., Beaufort, M.-F., Barbot, J.-F., Ulyashin, A.G., Fahrner, W.R. Materials Research Society	10 国際会議録 A Low Temperature Technology on the Base of Hydrogen Enhanced Thermal Donor Formation for Future High-Voltage Applications Job, R., Ulyashin, A.G., Fahrner, W.R., Niedernostheide, F.J., Schulze, H.J., Simoen, E., Claeys, C.L., Tonelli, G. SPIE-The International Society for Optical Engineering
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6 国際会議録 Comparison of Oxygen and Hydrogen Gettering at High-Temperature Postimplantation Annealing of Hydrogen- and Helium-Implanted Czochralski Silicon Job, R., Fahrner, W. R., Ivanov, A. I., Palmetshofer, L., Ulyashin, A. G. MRS - Materials Research Society	12 国際会議録 Oxygen Gettering and Thermal Donor Formation at Postimplantation Annealing of Hydrogen-Implanted Czochralski Silicon Ulyashin, A. G., Bumay, Yu. A., Fahrner, W. R., Ivanov, A. I., Job, R., Palmetshofer, L. MRS - Materials Research Society

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