Global Model of Silicon Chemical Vapor Deposition in Centura Reactors

Global Model of Silicon Chemical Vapor Deposition in Centura Reactors

著者名:

Segal, A.S.

掲載資料名:

CVD XV, proceedings of the fifteenth International Symposium on Chemical Vapor Deposition

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-13

発行年:

2000

開始ページ:

456

終了ページ:

463

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772785 [1566772788]

言語:

英語

請求記号:

E23400/200013

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013982
シリーズID:	PA00000028
会議名:	International Symposium on Chemical Vapor Deposition - CVD
回次:	15th
会議開催地:	Tronto, Ontario, Canada
会議開催年:	2000.05.14-2000.05.18

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