Blank Cover Image

High Performance Buried Silicon-Germanium Channel PMOST Fabricated Using Rapid Thermal Processing and Shallow Trench Isolation

著者名:
Tweet, D.J
Hsu, S.T.
Evans, D.R.
Ulrich, B.
Ono, Y.
Stecker, L.
さらに 1 件
掲載資料名:
Rapid thermal and other short-time processing technologies : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2000-9
発行年:
2000
開始ページ:
321
終了ページ:
328
総ページ数:
8
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772747 [1566772745]
言語:
英語
請求記号:
E23400/2000-9
資料種別:
国際会議録

類似資料:

1 国際会議録 Enhanced Mobility in Buried SiGe Channel PMOS Fabricated using Rapid Thermal Processing

Tweet, D.J., Hsu, S.F.

Electrochemical Society
7 国際会議録 Multilevel Damascene Interconnection in Integration of MOCVD Cu and Low-K Fluorinated Amorphous Carbon

Evans, D. R., Hsu, S-T., Nguyen, T., Stecker, L. H., Ulrich, B., Yang, H.

Materials Research Society
2 国際会議録 Study Of SiH4-Based PECVD Low-k Carbon-Doped Silicon Oxide

Yang, H., Tweet, D.J., Stecker, L.H., Pan, W., Evans, D.R., Hsu, S.

Materials Research Society
8 国際会議録 Interval Annealing During Alternating Pulse Deposition

Conley Jr., J.F., Tweet, D.J., Ono, Y., Stecker, G.

Materials Research Society
3 国際会議録 Thermal Stability of Organic Interlayer with Low Dielectric Constant

Hara, T., Takasoh, J., Yang, H., Tweet, D.J., Nguyen, T., Ma, Y., Evans, D.R., Hsu, S.T.

Electrochemical Society
9 国際会議録 Defect Generation and Suppression in Device Processes Using a Shallow Trench Isolation Scheme

Peschiarolli, D., Brambilla, M., Carnevale, G.P., Cascella, A., Cazzaniga, F, Clementi, c., Cremonesi, C., Gilardini, …

Electrochemical Society
4 国際会議録 High Thermal Stability Ni/Co Silicide on SiGe for Raised Source/Drain Structures

Tweet, D.J., Maa, J.S., Hsu, S.T.

Electrochemical Society
10 国際会議録 Characterization and optimization of overlay target design for shallow-trench isolation (STI) process

Stephen Hsu, Jason K. Saw, Daniel R. Busath

SPIE - The International Society of Optical Engineering
5 国際会議録 Fabrication of Strained Silicon on Insulator (SSOI) by Direct Wafer Bonding Using Thin Relaxed SiGe Film as Virtual Substrate

Lee, J.J., Maa, J.S., Tweet, D.J.., Hsu, S.T.

Materials Research Society
11 国際会議録 Stability Improvement of Nickel Silicide With Co Interlayer on Si, Polysilicon and SiGe

Maa, Jer-shen, Tweet, Douglas J., Ono, Yoshi, Stecker, Lisa, Hsu, Sheng Teng

Materials Research Society
6 国際会議録 Electrical Characteristics of CVD Copper Interconnects and Vias

Nguyen, T., Ono, Y., Evans, D.R., Senzaki, Y., Kobayashi, M., Charmeski, L.J., Ulrich, B.D., Hsu, S.T.

Electrochemical Society
12 国際会議録 SHALLOW SILICIDED JUNCTIONS FOR VLSI CMOS TRANSISTORS BY FURNACE AND RAPID THERMAL PROCESSING

Butler, A.L., Foster, D.J., Pickering, A.J.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12