Investigation of In-Situ Steam Generated Oxide (ISSG) followed by Remote Plasma Nitridation (RPN) for Effective Oxide Thickness Decrease and Gate Leakage Reduction

Investigation of In-Situ Steam Generated Oxide (ISSG) followed by Remote Plasma Nitridation (RPN) for Effective Oxide Thickness Decrease and Gate Leakage Reduction

著者名:

Eason, K.

掲載資料名:

Rapid thermal and other short-time processing technologies : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-9

発行年:

2000

開始ページ:

195

終了ページ:

202

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772747 [1566772745]

言語:

英語

請求記号:

E23400/2000-9

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013978
シリーズID:	PA00000028
会議名:	International Symposium on Rapid Thermal and Other Short-Time Processing Technologies ; Meeting of the Electrochemical Society
回次:	2000 ; 197th
会議開催地:	Toronto, ON, Canada
会議開催年:	2000.05.14-2000.05.18

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