Etching of Vias and Trenches through Low-k Dielectrics with Feature Sizes down to 0.1 um Using MORI High Density Plasmas

Etching of Vias and Trenches through Low-k Dielectrics with Feature Sizes down to 0.1 um Using MORI High Density Plasmas

著者名:

掲載資料名:

Plasma processing XIII : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-6

発行年:

2000

開始ページ:

279

終了ページ:

288

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772716 [1566772710]

言語:

英語

請求記号:

E23400/2000-6

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013975
シリーズID:	PA00000028
会議名:	International Symposium on Plasma Processing ; Meeting of the Electrochemical Society
回次:	13th ; 197th
会議開催地:	Tronto, Canada
会議開催年:	2000.05.14-2000.05.19

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