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Encroachment on Silicon Substrate by PECVD Deposited Tungsten at Low Temperatures and the Effect of WF5 on Selectivity

著者名:
掲載資料名:
Plasma processing XIII : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2000-6
発行年:
2000
開始ページ:
80
終了ページ:
89
総ページ数:
10
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772716 [1566772710]
言語:
英語
請求記号:
E23400/2000-6
資料種別:
国際会議録

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