Influence of the Standard CMOS Procesing on Ta2O5 Gate Dielectric Transistors Performance

Influence of the Standard CMOS Procesing on Ta2O5 Gate Dielectric Transistors Performance

著者名:

Bersuker, G. ( (SEMA TECH) )

Gilmer, M. ( (SEMA TECH) )

Zeitzoff, P.M. ( (SEMA TECH) )

Brown, G.A. ( (SEMA TECH) )

Jackson, M.D. ( (SEMA TECH) )

Shaapur, F. ( (SEMA TECH) )

Foran, B. ( (SEMA TECH) )

Huff, H.R. ( (SEMA TECH) )

さらに 3 件

掲載資料名:

Low and high dielectric constant materials : materials science, processing, and reliability issues : proceedings of the fifth international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-5

発行年:

2000

開始ページ:

178

終了ページ:

186

総ページ数:

9

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772709 [1566772702]

言語:

英語

請求記号:

E23400/2000-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013974
シリーズID:	PA00000028
会議名:	International Symposium on Low and High Dielectric Constant Materials ; Meeting of the Electrochemical Society
回次:	5th ; 197th
会議開催地:	Toronto, Ontario, Canada
会議開催年:	2000.05.14-2000.05.19

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