Integration Issues for New Dielectrics in CMOS Technology

Integration Issues for New Dielectrics in CMOS Technology

著者名:

Gates, S. ( (IBM) )

Chen, S.T. ( (IBM) )

Chen, X. ( (IBM) )

Cohen, S. ( (IBM) )

Edelstein, D. ( (IBM) )

Fitzsimmons, J. ( (IBM) )

Hedrick, J. ( (IBM) )

Restaino, D. ( (IBM) )

Ryan, J. ( (IBM) )

Simonyi, E. ( (IBM) )

Purushothaman, S. ( (IBM) )

さらに 6 件

掲載資料名:

Low and high dielectric constant materials : materials science, processing, and reliability issues : proceedings of the fifth international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-5

発行年:

2000

開始ページ:

31

終了ページ:

39

総ページ数:

9

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772709 [1566772702]

言語:

英語

請求記号:

E23400/2000-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013974
シリーズID:	PA00000028
会議名:	International Symposium on Low and High Dielectric Constant Materials ; Meeting of the Electrochemical Society
回次:	5th ; 197th
会議開催地:	Toronto, Ontario, Canada
会議開催年:	2000.05.14-2000.05.19

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