Degradation of Gate Oxide Integrity due to Ni and Cu Contamination and Impurity Gettering in Epitaxial Si Wafers

Degradation of Gate Oxide Integrity due to Ni and Cu Contamination and Impurity Gettering in Epitaxial Si Wafers

著者名:

掲載資料名:

The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-2

発行年:

2000

開始ページ:

387

終了ページ:

398

総ページ数:

12

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772679 [1566772672]

言語:

英語

請求記号:

E23400/2000-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013971
シリーズID:	PA00000028
会議名:	International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface
回次:	4th
会議開催地:	Tronto, Canada
会議開催年:	2000.05.15-2000.05.18

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