Blank Cover Image

Soft and Hard Breakdown of Ultrathin SiO2 Gate Oxides

著者名:
掲載資料名:
The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2000-2
発行年:
2000
開始ページ:
333
終了ページ:
344
総ページ数:
12
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772679 [1566772672]
言語:
英語
請求記号:
E23400/2000-2
資料種別:
国際会議録

類似資料:

1 国際会議録 Mesoscopic transport in broken down ultrathin SiO2 films

Miranda, E., Sune, N., Rodriguez, R., Nafria, M., Aymerich, X.

MRS-Materials Research Society
7 国際会議録 Extending the Reliability of SiO2-Based Dielectric to the Nanometer Limit

Wu, E. Y., Sune, J.

Electrochemical Society
2 国際会議録 Soft Breakdown in Ultrathin Oxides

Weir, B. E., Silverman, P. J., Alers, G. B., Monroe, D., Alam, M. A., Sorsch, T. W., Green, M. L., Timp, G. L., Ma, Y., …

MRS - Materials Research Society
8 国際会議録 A Study of V2O5-K2SO4-SiO2 Catalysts for Catalytic Vapor-Phase Oxidation of Toluene to Benzaldehyde

Rocha, A. O., Jr., Chagas, A. L., Sune, L. S. V. S., Lopes, M. F. S., Pereira, J. A. F. R.

Elsevier
3 国際会議録 Modeling Soft Breakdown of Ultrathin Gate Oxide Layers

Houssa, M., Mertens, P. W., Heyns, M. M.

MRS - Materials Research Society
9 国際会議録 Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation

Wristers, D., Wang, H.H., Han, L.K., Lin, C., Chen, T.S., Kwong, D.L., Fulford, J.

Electrochemical Society
4 国際会議録 Soft Breakdown Mechanism in Ultrathin Gate Oxides

Mizubayashi, W., Itokawa, H., Miyazaki, S., Hirose, M.

Electrochemical Society
10 国際会議録 Investigation of quasi-breakdown mechanism in ultrathin gate oxides

Guan, Hao, He, Y. D., Li, M. F., Cho, Byung Jin, Dong, Zhong

MRS-Materials Research Society
5 国際会議録 Physics-Based Percolation Model of Oxide Breakdown

J. Sune, E. Wu, S. Tous

Electrochemical Society
11 国際会議録 *The boundary between hard- and soft-breakdown in ultrathin silicon dioxide films

Toriumi, A., Satake, H.

MRS-Materials Research Society
6 国際会議録 From radiation induced leakage current to soft breakdown in irradiated MOS devices with ultrathin gate oxide

Ceschia, M., Paccagnella, A., Cester, A., Ghidini, G., Wyss, J.

MRS-Materials Research Society
12 国際会議録 Ultrathin SiO2 and Alternative Gate Dielectrics

Jakubowski,Andrzej, Janik,Tomasz, Korwin-Pawlowski,Michael, Lukasiak,Lidia, Majkusiak,Bogdan

SPIE - The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12