Model Interface Between Silicon and Disordered Si02
- 著者名:
- 掲載資料名:
- The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2000-2
- 発行年:
- 2000
- 開始ページ:
- 271
- 終了ページ:
- 282
- 総ページ数:
- 12
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566772679 [1566772672]
- 言語:
- 英語
- 請求記号:
- E23400/2000-2
- 資料種別:
- 国際会議録
類似資料:
SPIE-The International Society for Optical Engineering |
7
国際会議録
EFFECT OF STRAIN AND INTERFACE INTERDIFFUSION ON THE VALENCE BAND OFFSET AT Si/Ge INTERFACES
Materials Research Society |
Materials Research Society |
Materials Research Society |
Trans Tech Publications |
Materials Research Society |
Materials Research Society |
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
11
国際会議録
Side mode suppression ratio for 1.3-ヲフm loss-coupled DFB lasers with large loss-coupling coefficient
SPIE-The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
SPIE-The International Society for Optical Engineering |