Hyperthermal Nitridation for Ultrathin Silicon Oxynitride Gate Dielectrics

Hyperthermal Nitridation for Ultrathin Silicon Oxynitride Gate Dielectrics

著者名:

Krug, C.

掲載資料名:

The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-2

発行年:

2000

開始ページ:

187

終了ページ:

198

総ページ数:

12

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772679 [1566772672]

言語:

英語

請求記号:

E23400/2000-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013971
シリーズID:	PA00000028
会議名:	International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface
回次:	4th
会議開催地:	Tronto, Canada
会議開催年:	2000.05.15-2000.05.18

類似資料:

1 国際会議録 Thermally Driven Atomic Transport in Silicon Oxynitride and High-k Films on Silicon Baumvol, I.J.R., Stedile, F.C., Morais, J., Krug, C., Radtke, C., da, Rosa, E.B.O, Bastos, K.P., Pezzi, R.P., Miotti, … Electrochemical Society	7 国際会議録 Mechanisms of Thermal Growth of Very Thin Films of SiO2 on Si(OO1) in Dry O2 Trimaille, I., Stedile, F.C., Ghanem, J.-J., Baumvol, I.J.R., Rigo, S. Electrochemical Society
2 国際会議録 Atomic Transport During Thermal Nitridation of SiO2 Films in NH3 and During Subsequent Thermal Reoxidation Baumvol, I.J.R., Breelle, E., Stedile, F.C., Ganem, J.-J., Trimaille, I., Rigo, S. Electrochemical Society	8 国際会議録 Physical Characterization of Ultrathin Films of High Dielectric Constant Materials on Silicon Gusev, E.P., Copel, M., Cartier, E., Buchanan, D., Okorn-Schmidt, H., Cribelyuk, M.A., Falcon, D., Murphy, R., Molis, … Electrochemical Society
3 国際会議録 Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures F.C. Stedile, S.A. Corrêa, C. Radtke, L. Miotti, I.J.R. Baumvol Trans Tech Publications	9 国際会議録 Relationship Between Interfacial Roughness and Dielectric Reliability for Silicon Oxynitride Gate Dielectrics Processed With Nitric Oxide Sapjeta, J., Green, M. L., Chang, J. P., Silverman, P. J., Sorsch, T. W., Weir, B. E., Gladden, W., Ma, Y., Sung, C. Y., … MRS - Materials Research Society
4 国際会議録 INVITED: 50 nm VERTICAL REPLACEMENT-GATE (VRG) nMOSFETS WITH ALD HfO2 GATE DIELECTRICS Hergenrother, J.M., Nigani, T., Wilk, O.D., Klemens, F.P., Monroe, D., Sorsch, T.W., Busch, B., Green, M.L., Muller, … Electrochemical Society	10 国際会議録 Ultrathin Silicon Oxynitride Gate Dielectrics Gusev, E.P., D'Emic, C.P., Zabel, T.H., Copel, M. Electrochemical Society
5 国際会議録 INVITED: 50 nm VERTICAL REPLACEMENT-GATE (VRG) nMOSFETS WITH ALD HfO2 GATE DIELECTRICS Hergenrother, J.M., Nigani, T., Wilk, O.D., Klemens, F.P., Monroe, D., Sorsch, T.W., Busch, B., Green, M.L., Muller, … Electrochemical Society	11 国際会議録 Compositional and Electrical Differences of SiO2/SiC and SiO2/Si Structures Upon Thermal Annealing in N2O and NO Stedile, F.C., Radtke, C., Baumvol, I.J.R., Boudinov, H., McDonald, K., Huang, M.B., Weller, R.A., Feldman, L.C., … Electrochemical Society
6 国際会議録 Dynamics of Thermal Growth of Silicon Oxide Films on Si Almeida, R.M.C. de, Goncalves, S., Baumvol, I.J.R., Stedile, F.C. Electrochemical Society	12 国際会議録 Minimization of Interfacial Microroughness for 13-60 ｢？Ultrathin Gate Oxides Sapjeta, J., Boone, T., Rosamilia, J. M., Silverman, P. J., Sorsch, T. W., Timp, G., Weir, B. E. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12