Compositional and Electrical Differences of SiO2/SiC and SiO2/Si Structures Upon Thermal Annealing in N2O and NO
- 著者名:
Stedile, F.C. Radtke, C. Baumvol, I.J.R. Boudinov, H. McDonald, K. Huang, M.B. Weller, R.A. Feldman, L.C. Williams, J.R. - 掲載資料名:
- The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2000-2
- 発行年:
- 2000
- 開始ページ:
- 169
- 終了ページ:
- 180
- 総ページ数:
- 12
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566772679 [1566772672]
- 言語:
- 英語
- 請求記号:
- E23400/2000-2
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures
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