Electron Paramagnetic Resonance Study of Defects at Nitric Oxide Treated Si/SiO2 and Si/Si3N4 Interfaces

Electron Paramagnetic Resonance Study of Defects at Nitric Oxide Treated Si/SiO2 and Si/Si3N4 Interfaces

著者名:

掲載資料名:

The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-2

発行年:

2000

開始ページ:

161

終了ページ:

168

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772679 [1566772672]

言語:

英語

請求記号:

E23400/2000-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013971
シリーズID:	PA00000028
会議名:	International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface
回次:	4th
会議開催地:	Tronto, Canada
会議開催年:	2000.05.15-2000.05.18

類似資料:

1 国際会議録 *Modification of Si(001)/SiO2 interfaces by nitric oxide treatments: An electron paramagnetic resonance study Cantin, Jean-Louis, Bardeleben, Hans Jurgen von MRS-Materials Research Society	7 国際会議録 EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC von Bardeleben, H.J., Cantin, J.L. Trans Tech Publications
2 国際会議録 A Combined Photoluminescence aha Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC Sullivan, W., Steeds, J.W., von Bardeleben, H.J., Cantin, J.L. Trans Tech Publications	8 国際会議録 Forming Gas Annealing of the Carbon PbC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study Cantin, J.L., von Bardeleben, H.J. Trans Tech Publications
3 国際会議録 Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC von Bardeleben, H.J., Cantin, J.L., Shishkin, Y., Devaty, R.P., Choyke, W.J. Trans Tech Publications	9 国際会議録 EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V von Bardeleben, H.J., Cantin, J.L., Reshanov, S.A., Rastegaev, V.P. Trans Tech Publications
4 国際会議録 EPR Studies of Interface Defects in n-Type 6H-SiC/SiO2 Using Porous SiC von Bardeleben, H.J., Cantin, J.L., Mynbaeva, M., Saddow, S.E. Trans Tech Publications	10 国際会議録 Defect and Composition Analysis of as-deposited and Nitrided (100)Si/SiO2/Hf1-xSiO2 Stacks byElectron Paramagnectic Resonance and Ion Beam Analysis von Bardeleben, H. J., Cantin, J. L., Ganem, J. J., Trimaille, I., Gusev, E. P. Springer
5 国際会議録 Interface Defects in n-Type 3C-SiC/SiO2: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals Bardeleben, H. J. von, Cantin, J. L., Ke, L., Shishkin, Y., Devaty, R. P., Choyke, W. J. Trans Tech Publications	11 国際会議録 Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold von Bardeleben, H.J., Cantin, J.L., Baranov, P.G., Mokhov, E.N. Trans Tech Publications
6 国際会議録 EPR Study of the Defects in Porous Si/SiO x N y and Si0.80Ge0.20/SiGeO2 Cantin, J.L., Schoisswohl, M., von Bardeleben, H.J., Morazzani, V., Ganem, J.-J., Trimaille, I. Electrochemical Society	12 国際会議録 EPR Studies of SiCISiO2 Interfaces in n-type 4H-and 6H- Oxidized Porous SIC von Bardeleben, H.J., Cantin, J.L., Mynbaeva, M., Saddow, S.E., Shishkin, Y., Devaty, R.P., Choyke, W.J. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12