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Low-Temperature Formation of Gate-Grade Silicon Oxide Films Using High-Density Krypton Plasma

著者名:
掲載資料名:
The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2000-2
発行年:
2000
開始ページ:
113
終了ページ:
124
総ページ数:
12
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772679 [1566772672]
言語:
英語
請求記号:
E23400/2000-2
資料種別:
国際会議録

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