MBE Growth of Group III-Nitrides-Arsenides for Long Wavelength Opto-Electronic Devices on GaAs Substrates

MBE Growth of Group III-Nitrides-Arsenides for Long Wavelength Opto-Electronic Devices on GaAs Substrates

著者名:

掲載資料名:

Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-1

発行年:

2000

開始ページ:

195

終了ページ:

204

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772662 [1566772664]

言語:

英語

請求記号:

E23400/2000-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013970
シリーズID:	PA00000028
会議名:	International Symposium on Compound Semiconductor Power Transistors ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
回次:	2nd ; 32nd ; 197th
会議開催地:	Toronto, Ontario, Canada
会議開催年:	2000.05.14-2000.05.19

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