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Metal Clad Layer Formation for CMOSFETs/SIMOX by Selective Chemical Vapor Deposition of Tungsten

著者名:
掲載資料名:
Interconnect and contact metallization for ULSI : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
99-31
発行年:
1999
開始ページ:
10
終了ページ:
21
総ページ数:
12
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772549 [1566772540]
言語:
英語
請求記号:
E23400/99-31
資料種別:
国際会議録

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