The Mechanism of Notching Formation between ARC TIN and AICu Layer During Etching
- 著者名:
- 掲載資料名:
- Plasma etching processes for sub-quarter micron devices : proceedings of the international symposium
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 99-30
- 発行年:
- 1999
- 開始ページ:
- 344
- 終了ページ:
- 350
- 総ページ数:
- 7
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566772532 [1566772532]
- 言語:
- 英語
- 請求記号:
- E23400/99-30
- 資料種別:
- 国際会議録
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