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Rate-Limiting Step of SiO2 Etching Reaction in Fluorocarbon Plasma Investigated by Electron Spin Resonance and X-Ray Photoelectron Spectroscopy

著者名:
掲載資料名:
Plasma etching processes for sub-quarter micron devices : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
99-30
発行年:
1999
開始ページ:
99
終了ページ:
104
総ページ数:
6
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772532 [1566772532]
言語:
英語
請求記号:
E23400/99-30
資料種別:
国際会議録

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