Piezo-Doped' Low-Noise GaN Heterostructure Field Effect Transistors

Piezo-Doped' Low-Noise GaN Heterostructure Field Effect Transistors

著者名:

掲載資料名:

Advanced luminescent materials and quantum confinement : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-22

発行年:

1999

開始ページ:

325

終了ページ:

332

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772457 [1566772451]

言語:

英語

請求記号:

E23400/99-22

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013951
シリーズID:	PA00000028
会議名:	International Symposium on Advanced Luminescent Materials and Quantum Confinement ; Electrochemical Society Meeting
回次:	1999 ; 196th
会議開催地:	Honolulu, HI, USA
会議開催年:	1999.10.18-1999.10.20

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