Fine/High Aspect Ratio of SiO2 Hole and Gap Etching

Fine/High Aspect Ratio of SiO2 Hole and Gap Etching

著者名:

Horiike, Y.

掲載資料名:

ULSI process integration : proceedings of the first international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-18

発行年:

1999

開始ページ:

329

終了ページ:

344

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772419 [1566772419]

言語:

英語

請求記号:

E23400/99-18

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013947
シリーズID:	PA00000028
会議名:	International Symposium on ULSI Process Integration ; Meeting of the Electrochemical Society
回次:	1st ; 196th
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	1999.10.17-1999.10.22

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