The Integration of Shallow Trench Isolation (STI) for High Density DRAM with 0.18 μm Technology and Beyond

The Integration of Shallow Trench Isolation (STI) for High Density DRAM with 0.18 μm Technology and Beyond

著者名:

Pan, P.

掲載資料名:

ULSI process integration : proceedings of the first international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-18

発行年:

1999

開始ページ:

213

終了ページ:

222

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772419 [1566772419]

言語:

英語

請求記号:

E23400/99-18

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013947
シリーズID:	PA00000028
会議名:	International Symposium on ULSI Process Integration ; Meeting of the Electrochemical Society
回次:	1st ; 196th
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	1999.10.17-1999.10.22

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