Base Pushout and High Current Effects in InP-based Pnp Heterojunction Bipolar Transistors

Base Pushout and High Current Effects in InP-based Pnp Heterojunction Bipolar Transistors

著者名:

掲載資料名:

State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI) : proceedings of the thirty-first symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-17

発行年:

1999

開始ページ:

185

終了ページ:

197

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772402 [1566772400]

言語:

英語

請求記号:

E23400/99-17

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013946
シリーズID:	PA00000028
会議名:	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Joint International Meeting of the Electrochemical Society and the Electrochemical Society of Japan
回次:	31st ; 1999
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	1999.10.17-1999.10.22

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