Electrical Measurements of Annealed Boron Implants for Shallow Junctions

Electrical Measurements of Annealed Boron Implants for Shallow Junctions

著者名:

掲載資料名:

Advances in rapid thermal processing : proceedings of the symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-10

発行年:

1999

開始ページ:

133

終了ページ:

140

総ページ数:

8

出版情報:

Pennington, N. J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772327 [156677232X]

言語:

英語

請求記号:

E23400/99-10

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013940
シリーズID:	PA00000028
会議名:	International symposium on advances in rapid thermal processing ; Meeting of Electrochemical Society
回次:	1999 ; 195th
会議開催地:	Seattle, WA, USA
会議開催年:	1999.05.03-1999.05.06

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2 国際会議録 Shallow Boron Implant Activation Fiory, A. T., Bourdelle, K. K., Agarwal, A., Gossmann, H-J., Rafferty, C. S. MRS - Materials Research Society	8 国際会議録 Implant and Anneal Methods for PMOS Gates Fiory, A.T., Bourdell, K, Chen, Y., Ma, Y., McKinley, J.M., Lay, P.K., Koh, H.W. Electrochemical Society
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