Contribution of Phi Centers to Nlidgap Interface Trap Density in Oxidized (100) Silicon Wafers

Contribution of Phi Centers to Nlidgap Interface Trap Density in Oxidized (100) Silicon Wafers

著者名:

掲載資料名:

Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-6

発行年:

1999

開始ページ:

120

終了ページ:

127

総ページ数:

8

出版情報:

Pennington, New Jersey: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772280 [1566772281]

言語:

英語

請求記号:

E23400/99-6

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013936
シリーズID:	PA00000028
会議名:	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
回次:	5th
会議開催地:	Seattle, WA, USA
会議開催年:	1999.05.02-1999.05.07

類似資料:

1 国際会議録 Hydrogen Speciation in Electronic Silica Poindexter, E.H., Gerardi, G.J., Keeble, D.J. Electrochemical Society	7 国際会議録 A NEW TWO-STEP PLASMA-ASSISTED SURFACE CLEANING-OXIDATION AND FILM-DEPOSITION PROCESS SEQUENCE FOR THE FORMATION OF Si(100)/SiO2 INTERFACES WITH LOW DENSITIES … Ma, Y., Yasuda, T., Habermehl, S., He, S.S., Stephens, D.J., Lucovsky, G. Materials Research Society
2 国際会議録 OBSERVATION OF PARAMAGNETIC SILICON DANGLING ORBITALS IN LUMINESCENT POROUS SILICON Rong, F.C., Poindexter, E.H., Harvey, J.F., Morton, D.C., Lux, R.A., Gerardi, G.J. Materials Research Society	8 国際会議録 Porous silicon electroluminescence mechanisms and defect analysis Harvey,J.F., Poindexter,E.H., Morton,D.C., Pong,F.C., Lux,R.A., Tsu,R. Kluwer Academic Publishers
3 国際会議録 EPR and Microwave Absorption Measurements on Crystal Tl2ca2Ba2Cu3O10 Keeble. J. D, Ginley. S. D, Poindexter. H. E, Gerardi. J. G Kluwer Academic Publishers	9 国際会議録 WESTERN FLY ASH RESEARCH, DEVELOPMENT AND DATA CENTER McCarthy, G.J., Manz, O.E., Stevenson, R.J., Hassett, D.J.., Groenewolg, G.H. Materials Research Society
4 国際会議録 GaAs SURFACE STABILIZATION BY VACUUM ANNEAL WITH SiO Gerardi, G.J., Rong, F.C., Poindexter, E.H., Harmatz, M., Shen, H., Warren, W.L. Materials Research Society	10 国際会議録 Vacancy Related Defects in La0.5Sr0.5CoO3-ｦﾄ Thin Films Keeble, D. J., Madhukar, S., Nielsen, B., Krishnan, A., Asoka-Kumar, P., Aggarwal, S., Ramesh, R., Poindexter, E. H. MRS - Materials Research Society
5 国際会議録 LOW -TEMPERATURE PECVD Si3N4 FILMS FOR GaAs ENCAPSULATION AND PASSIVATION Pfeffer, R.L., Gerardi, G.J., Lux, R.A., Jones, K.A., Poindexter, E.H., Chang, W.H., Devine, R.A.B. Materials Research Society	11 国際会議録 PARAMAGNETIC NITROGEN DEFECTS IN SILICON NITRIDE Warren, W.L., Kanicki, J., Robertson, J., Poindexter, E.H. Materials Research Society
6 国際会議録 The Pb1 Center at the Si-SiO2 Interface: Updated Evidence and Emerging Models Stahis, J.H., Cartier, E., Edwards, A.H., Poindexter, E.H. Electrochemical Society	12 国際会議録 COMPARISON OF THE DENSITY AND DISTRIBUTION OF TRAPS GENERATED BY HIGH VOLTAGE STRESS IN SILICON OXIDE AND SILICON OXYNITRIDES Richardson, J.T., Dumin, D.J., Lo, G.Q., Kwong, D.L., Gross, B.J., Sodini, C.G. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12