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Properties of Gate-Quality Silicon Nitride and Oxynitride Dielectrics Deposited Using an Electron Cyclotron-Resonance Plasma Source

著者名:
Landheer, D.
Hulse, J.E.
Quance, T.
Aers, G.C.
Sproule, G.I.
Lennard, W.N.
Simpson, P.J.
Nlassoumi, G.R.
さらに 3 件
掲載資料名:
Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
99-6
発行年:
1999
開始ページ:
75
終了ページ:
89
総ページ数:
15
出版情報:
Pennington, New Jersey: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772280 [1566772281]
言語:
英語
請求記号:
E23400/99-6
資料種別:
国際会議録

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