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A Comprehensive Physical Model of Oxide Wearout and Breakdown Explaining the Fluence, Time, Field, and Dependence of Trap Generation Thickness

著者名:
掲載資料名:
Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
99-6
発行年:
1999
開始ページ:
11
終了ページ:
25
総ページ数:
15
出版情報:
Pennington, New Jersey: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772280 [1566772281]
言語:
英語
請求記号:
E23400/99-6
資料種別:
国際会議録

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