Reduction of Surface State Density in H2S Plasma-Treated GaAs

Reduction of Surface State Density in H2S Plasma-Treated GaAs

著者名:

掲載資料名:

Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-4

発行年:

1999

開始ページ:

220

終了ページ:

226

総ページ数:

7

出版情報:

Pennington, N. J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772266 [1566772265]

言語:

英語

請求記号:

E23400/99-4

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013934
シリーズID:	PA00000028
会議名:	Meeting of the Electrochemical Society
回次:	195th
会議開催地:	Seattle, WA, USA
会議開催年:	1999.05.02-1999.05.07

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