Effects of Strain Relaxation on the Carrier Transport Properties on InP-based Pseudomorphic High Electron Mobility Structures
- 著者名:
Sandhu, R.S. Moore, C.D. Goorsky, M.S. Wong, L. Wang, K.L. Jiang, H. Chin, T.P. Wojtowicz, M. Block, T.R. Streit, D.C. - 掲載資料名:
- Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX)
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 99-4
- 発行年:
- 1999
- 開始ページ:
- 146
- 終了ページ:
- 154
- 総ページ数:
- 9
- 出版情報:
- Pennington, N. J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566772266 [1566772265]
- 言語:
- 英語
- 請求記号:
- E23400/99-4
- 資料種別:
- 国際会議録
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6
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STRAIN RELAXATION IN EPITAXIAL HETEROSTRUCTURES: SENSITIVITY OF HIGH RESOLUTION X-RAY DIFFRACTION
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