THE DOPANT TRAPPING AND DE-TRAPPING AT THE SIO21SI INTERFACE

THE DOPANT TRAPPING AND DE-TRAPPING AT THE SIO21SI INTERFACE

著者名:

掲載資料名:

Proceedings of the Fifth International Symposium of Process Physics and Modeling in Semiconductor Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-2

発行年:

1999

開始ページ:

108

終了ページ:

115

総ページ数:

8

出版情報:

Pennington, New Jersey: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772242 [1566772249]

言語:

英語

請求記号:

E23400/99-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013932
シリーズID:	PA00000028
会議名:	International Symposium on Process Physics and Modeling in Semiconductor Technology ; Spring Meeting of the Electrochemical Society
回次:	5th ; 195th
会議開催地:	Seattle, Washington, USA
会議開催年:	1999.05.05-1999.05.06

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